GD5F1GQ5UEYIGY_1G-bit 2K+128BPageSize with E Version
SPI (Serial Peripheral Interface) NAND Flash provides an ultra-cost effective while high density non-volatile memory storage solution for embedded systems, based on an industry-standard NAND Flash memory core
  • 1Gb SLC NAND Flash
  • Full voltage range for 1.8V: 1.7V ~ 2.0V
  • Full voltage range for 3.3V: 2.7V ~ 3.6V
详细内容


FEATURE

◆1Gb SLC NAND Flash◆Advanced security Features

-8K-Byte OTP Region

◆Organization

-Internal ECC On(ECC_EN=1,default):◆Program/Erase/Read Speed Page Size:2048-Byte+64-Byte-Page Program time:400us typical

-Internal ECC Off(ECC_EN=0):-Block Erase time:3ms typical Page Size:2048-Byte+128-Byte-Page read time:60us maximum

◆Standard,Dual,Quad SPI,DTR◆Low Power Consumption

-Standard SPI:SCLK,CS#,SI,SO,WP#,HOLD#-30mA maximum active current

-Dual SPI:SCLK,CS#,SIO0,SIO1,WP#,HOLD#-50uA maximum standby current

-Quad SPI:SCLK,CS#,SIO0,SIO1,SIO2,SIO3

-DTR(Double Transfer Rate)Read:SCLK,CS#,SIO0,◆Enhanced access performance SIO1,SIO2,SIO3-2Kbyte cache for fast random read

◆High Speed Clock Frequency◆Advanced Feature for NAND

-3.3V:133MHz for fast read with 30pF load-Factory good block0

-1.8V:104MHz for fast read with 30pF load

-3.3V:Quad I/O Data transfer up to 532 Mbits/s◆Reliability

-1.8V:Quad I/O Data transfer up to 416 Mbits/s-P/E cycles with ECC:100K

-Data retention:10 Years

◆Software/Hardware Write Protection

-Write protect all/portion of memory via software◆Internal ECC

-Register protection with WP#Pin-4bits/528byte

-Power Lock Down Protection

◆Single Power Supply Voltage

-Full voltage range for 1.8V:1.7V~2.0V

-Full voltage range for 3.3V:2.7V~3.6V

Note:(1)ECC is on default,which can be disable by user.